The GPP chip adopts the electrophoresis glass and low-damage laser-cutting method to form the glassivation structure with high stability, has the advantages of good voltage uniformity, low reverse...

The TVS protective diode chip adopts the GPP process, the product has the high reliability, high inverse-voltage concentration, strong VC capability, strong anti-surging capability and other ...

The HV diode is made by overlapping of several mesa-type chips, to realize the HV-resistant layer unit structure, adopts the specific new structure protective-glue passivation and epoxy sealing, ...

The silicon bridge rectifier adopts the glass-passivated chips, has the high positive surge-current resistance, and can be used as the single-phase bridge rectifier for common power supplies.

N-channel power field-effect transistor adopts the plane grille technology, has the lower on-resistance, higher switching frequency, and higher single-pulse avalanche-breakdown resisting capability, ...

The Schottky diode is a semiconductor element with low power consumption, large current and super-high speed; its reverse recovery time is very short (to several nanoseconds), positive break-over vo...